Source/drain engineering for MOSFETs with embedded-Si:C technology

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• 作者：Hiroshi Itokawa ; Nobuaki Yasutake ; Naoki Kusunoki ; Shintaro Okamoto ; Nobutoshi Aoki ; Ichiro Mizushima
• 关键词：MOSFET ; Strain ; Silicon ; Carbon
• 刊名：Applied Surface Science
• 出版年：2008
• 出版时间：30 July 2008
• 年：2008
• 卷：254
• 期：19
• 页码：6135-6139
• 全文大小：1342 K

文摘

Embedded silicon carbon alloy (e-Si:C) technology for source and drain (S/D) is expected to improve nMOSFET drive current. The distribution and activation characteristics of arsenic in Si:C film and the interfacial solid-phase reaction of the Ni/Si:C system were studied with the aim of achieving the maximum improvement of the characteristics of e-Si:C S/D. It was clarified that the active carrier concentration of Si:C decreased with increasing carbon concentration compared to the control Si. There is concern that the low doping activation in Si:C increases series resistance of e-Si:C S/D nMOSFETs and degrades the performance gain expected from the strain effect.