Ta₂Si short time thermal oxidized layers in N₂O and O₂ to form high-k gate dielectric on SiC

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• 作者：A. Pé ; rez-Tomá ; s ; N. Mestres ; P. Godignon ; J. Montserrat ; J. Millá ; n
• 关键词：Silicon carbide ; Tantalum silicide ; Thermal oxidation ; High-k dielectric ; Metal– ; insulator– ; semiconductor devices
• 刊名：Applied Surface Science
• 出版年：2006
• 出版时间：15 December 2006
• 年：2006
• 卷：253
• 期：4
• 页码：1741-1744
• 全文大小：652 K

文摘

In this work, we report on two properties of the oxidation of tantalum silicide (Ta₂Si) on SiC substrates making this material of interest as insulator for many wide bandgap or compound semiconductors. The relatively high oxidation rate of tantalum silicide to form high-k insulator layers and its ability for being oxidized in diluted N₂O ambient in a manner similar to the oxidation in O₂ are investigated. Metal–insulator–semiconductor capacitors have been used to establish the actual applicability and constrain of the high-k insulator depending on the oxidation conditions. At 1050 °C, the reduction of the oxidation time from 1 h to 5 min affects primordially the SiO_x interfacial layer formed between the bulk insulator and the substrate. This interfacial layer strongly influences the metal–insulator–semiconductor performances of the oxidized Ta₂Si layer. The bulk insulator basically remains unaffected although some structural differences arise when the oxidation is performed in N₂O.