Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR

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• 作者：Diogo de Moura Pedroso^a ; ^{diogo.mourapedroso@gmail.com} ; Gustavo Soares Vieira^a ; ^b ; ^{gvieira@ieav.cta.br} ; Angelo Passaro^a ; ^b ; ^{angelo.passaro@pq.cnpq.br}
• 关键词：Quantum well ; Dark current ; Probability-flux operator ; Semiconductor devices ; Infrared photodetectors ; Computational modelling
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：86
• 期：Complete
• 页码：190-197
• 全文大小：1084 K
• 卷排序：86

文摘

Dark current is a figure of merit of multiquantum well devices. A dark current model based on a probability-flux operator is presented. The model does not require adjusting parameters related to transport of carriers. Structures of infrared photodetectors ranging from 4 to 27 µm are studied. Experimental data at different conditions are reproduced in a good agreement.