Vapor-liquid-solid growth of thick 2H-SiC layers under CH₄ continuous flow

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• 作者：Yusuke Nakagawa ; Shin Takeuchi ; Akito Ishikawa ; Mamoru Imade ; ^{imade@eei.eng.osaka-u.ac.jp} ; Masashi Yoshimura ; Yusuke Mori
• 关键词：A2. Growth from solutions ; A3. Liquid phase epitaxy ; A2. Vapor&ndash ; liquid&ndash ; solid process ; B1. Inorganic compounds ; B2. Semiconducting silicon compounds
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：15 May, 2013
• 年：2013
• 卷：371
• 期：Complete
• 页码：23-27
• 全文大小：830 K

文摘

We attempted the vapor-liquid-solid (VLS) growth of single-phase 2H-SiC thick layers in Li-Si solution under CH₄ continuous flow. The thickness of liquid phase epitaxy (LPE) layers increased linearly with the CH₄ flowing period without slowing of the growth rate, reaching 270 ¦Ìm (45 ¦Ìm/h). Furthermore, a high growth temperature of 1180 ¡ãC and optimum partial pressure of CH₄ gas allowed an increase in the thickness of the LPE layers, resulting in a thickness of 850 ¦Ìm. A high resolution transmission electron microscope (HR-TEM) and X-ray diffraction (XRD) measurements showed that these LPE layers were a 2H-SiC polytype. We concluded that VLS growth in Li-Si solution under CH₄ continuous flow is useful for the long-term growth of a thick 2H-SiC layer.