Growth of SiC single crystals on patterned seeds by a sublimation method

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Growth of SiC single crystals on patterned seeds by a sublimation method

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作者：Xianglong Yang ; Xiufang Chen ; Yan Peng ; Xiangang Xu ; ^{xxu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Xiaobo Hu ; ^{xxu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：A1. Threading dislocation density ; A2. Patterned seeds ; A2. Lateral growth ; B1. SiC
刊名：Journal of Crystal Growth
出版年：2016
出版时间：1 April 2016
年：2016
卷：439
期：Complete
页码：7-12
全文大小：1385 K

文摘

•: The patterned seeds were used to improve the structural perfection of SiC crystals by PVT.
•: Anisotropy in lateral growth rates was observed.
•: The dependence of lateral growth rate on growth conditions was investigated.

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