Electronic structure of La₂O₃/Si interface by in situ photoemission spectroscopy

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• 作者：Abduleziz Ablat^a ; ^{a_ablat@hotmail.com} ; Mamatrishat Mamat^a ; ^{mmtrxt@xju.edu.cn} ; Yasin Ghupur^a ; Aimierding Aimidula^a ; Rong Wu^a ; Muhammad Ali Baqi^a ; Turghunjan Gholam^a ; Jiaou Wang^b ; Haijie Qian^b ; Rui Wu^b ; Kurash Ibrahim^b
• 关键词：La2O3 ; High-k ; Structural ; X-ray techniques ; Interface
• 刊名：Materials Letters
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：191
• 期：Complete
• 页码：97-100
• 全文大小：718 K
• 卷排序：191

文摘

A study of the interface between La2O3 films and Si substrates was conducted. In situ photoelectron spectra investigation was carried out for La2O3/Si interface. The La-silicate phase rapidly formed on the Si surface, reducing the Si-O bonding.