APT has been applied to characterize the microstructure of white etching area (WEA). Quantitative analyses of C distribution indicate that carbides are dissolved on the WEA. WEA contains equiaxed grains with a uniform grain size of 10 nm. C segregation at grain boundaries stabilizes the nanosized grain structure. Formation of WEA is explained by severe local plastic deformation introduced by cyclic contact loading.
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