Impurity effects in crystal growth from solutions: Steady states, transients and step bunch motion

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• 作者：Madhav Ranganathan^a ; ^{madhav@gmail.com" class="auth_mail} ; ^{madhavr@iitk.ac.in" class="auth_mail} ; John D. Weeks^b
• 关键词：A1. Computer simulations ; A1. Growth models ; A1. Impurities ; A1. Supersaturated solutions ; A2. Crystal growth from solutions
• 刊名：Journal of Crystal Growth
• 出版年：1 May, 2014
• 年：2014
• 卷：393
• 期：Complete
• 页码：35-41
• 全文大小：1177 K

文摘

We analyze a recently formulated model in which adsorbed impurities impede the motion of steps in crystals grown from solutions, while moving steps can remove or deactivate adjacent impurities. In this model, the chemical potential change of an atom on incorporation/desorption to/from a step is calculated for different step configurations and used in the dynamical simulation of step motion. The crucial difference between solution growth and vapor growth is related to the dependence of the driving force for growth of the main component on the size of the terrace in front of the step. This model has features resembling experiments in solution growth, which yields a dead zone with essentially no growth at low supersaturation and the motion of large coherent step bunches at larger supersaturation. The transient behavior shows a regime wherein steps bunch together and move coherently as the bunch size increases. The behavior at large line tension is reminiscent of the kink-poisoning mechanism of impurities observed in calcite growth. Our model unifies different impurity models and gives a picture of nonequilibrium dynamics that includes both steady states and time dependent behavior and shows similarities with models of disordered systems and the pinning/depinning transition.