Effect of ion beam etching on the surface roughness of bare and silicon covered beryllium films

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• 作者：N.I. Chkhalo^a ; ^{chkhalo@ipm.sci-nnov.ru} ; M.S. Mikhailenko^a ; A.V. Mil'kov^b ; A.E. Pestov^a ; ^{aepestov@ipm.sci-nnov.ru} ; V.N. Polkovnikov^a ; ^c ; N.N. Salashchenko^a ; I.L. Strulya^b ; M.V. Zorina^a ; S.Yu. Zuev^a
• 关键词：X-ray (EUV) mirrors ; Ion polishing ; Roughness ; Beryllium
• 刊名：Surface and Coatings Technology
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：311
• 期：Complete
• 页码：351-356
• 全文大小：1078 K
• 卷排序：311

文摘

The main aspects of using ion-beam etching for finish polishing of beryllium films are studied. The influence of the neon ion energy and angle of incidence on the beryllium films surface roughness is shown. The etching rates of beryllium depending on the angle of incidence and energy of neon ions are measured. It is found that 400 eV is the optimal energy for neon ion etching ensuring slight smoothing (incidence angles of ± 40º). The effective roughness from σeff = 1.37 nm down to σeff = 0.29 nm. The deposition of 200 nm silicon films onto beryllium and their subsequent etching should improve the effective roughness. Here the σeff (spatial frequencies range q = 0.025-60 μm− 1), was improved from σeff = 1.37 nm down to σeff = 0.29 nm. The reflectivity of the Mo/Si mirror deposited on a polishing substrate (λ = 13.5 nm) increased from 2% up to 67.5%.