Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

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• 作者：C.X. Ren^a ; ^{cr458@cam.ac.uk} ; B. Rouet-Leduc^a ; J.T. Griffiths^a ; E. Bohacek^a ; M.J. Wallace^b ; P.R. Edwards^b ; M.A. Hopkins^c ; D.W.E. Allsopp^c ; M.J. Kappers^a ; R.W. Martin^b ; R.A. Oliver^a
• 关键词：Semiconductor ; LED ; Defect ; Electroluminescence
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：118-124
• 全文大小：1617 K
• 卷排序：99

文摘

Inhomogeneous EL in InGaN LEDs was investigated using multiple microscopy techniques. The presence of hexagonal defects at the centre of the inhomogeneities was discovered. Simulations using the structure of the defect established by TEM confirm its role causing inhomogeneous EL. TEM and wafer-scale statistical analysis suggest the hexagonal defects appear at poorly coalesced boundaries.