Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

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Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

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作者：Yong Deok Kim ; Seung Kyu Oh ; Min Joo Park ; Joon Seop Kwak ; ^{jskwak@sunchon.ac.kr" class="auth_mail" title="E-mail the corresponding author}
关键词：A. Nitrides ; A. Optical materials ; A. Semiconductors ; B. Optical properties ; D. Electrical properties
刊名：Materials Research Bulletin
出版年：2016
出版时间：October 2016
年：2016
卷：82
期：Complete
页码：35-38
全文大小：1228 K

文摘

•: A nitrogen implanted current-blocking layer was successfully demonstrated.
•: Light-extraction efficiency and radiant intensity was increased by more than 20%.
•: Ion implantation was successfully implemented in GaN based light-emitting diodes.

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