The electrical performance of Si-based n-channel FinFETs as W/L/H = 21/30/83 nm with SiON gate dielectric was measured.

The electrical characteristics of Si-based p-channel FinFETs as W/L/H = 21/30/83 nm with SiON gate dielectric were extracted.

The top-view profile of Si multiple fins device with SEM photograph was exhibited.

The electrical performance in TCAD simulation with and without work function adjustment was demonstrated.

The cross-sectional profile of single FinFET with TEM image was demonstrated as W_fin = 8.6–11.4 nm and H_fin = 82.9 nm.