Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

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Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

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作者：W. Zhao^a ; M. Steidl^a ; A. Paszuk^a ; S. Brü ; ckner^a ; ^b ; A. Dobrich^a ; O. Supplie^a ; ^b ; P. Kleinschmidt^a ; T. Hannappel^a ; ^b ; ^{thomas.hannappel@tu-ilmenau.de" class="auth_mail" title="E-mail the corresponding author}
关键词：(MO)CVD ; MOVPE ; Thermal deoxidation ; Si(111) ; Hydrogen ; III-V-on-Si heteroepitaxy
刊名：Applied Surface Science
出版年：2017
出版时间：15 January 2017
年：2017
卷：392
期：Complete
页码：1043-1048
全文大小：1418 K

文摘

bel">•: We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar Hb>2b>.
bel">•: UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied.
bel">•: After processing the Si(111) surface is free of contamination and atomically flat.
bel">•: The surface exhibits a (1 × 1) reconstruction and monohydride termination.
bel">•: Wet-chemical pretreatment and homoepitaxy are required for a regular step structure.

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