Low-temperature photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanocrystals

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• 作者：E. Steveler^a ; ^{emilie.steveler@insa-strasbourg.fr} ; H. Rinnert^b ; M. Vergnat^b
• 关键词：Photoluminescence ; Neodymium ; Rare earth ; Silicon oxide ; Silicon nanocrystals ; Low-temperature
• 刊名：Journal of Luminescence
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：183
• 期：Complete
• 页码：311-314
• 全文大小：402 K
• 卷排序：183

文摘

Neodymium-doped silicon oxide thin films have been prepared by evaporation. Silicon nanocrystals are generated in the films by annealing post-treatments. Under indirect excitation, neodymium ions are sensitized by nanocrystals. Below 100 K, the neodymium-related photoluminescence intensity saturates. Saturation is explained by a decrease of the coupling efficiency with nanocrystals.