Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

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• 作者：Oleg A. Ageev ; Maxim S. Solodovnik ; ^{solodovnikms@sfedu.ru} ; Sergey V. Balakirev ; Ilya A. Mikhaylin ; Mikhail M. Eremenko
• 关键词：A1. Computer simulation ; A1. Surface processes ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：46-51
• 全文大小：1262 K
• 卷排序：457

文摘

A Monte Carlo method is used to study kinetic effects on GaAs(001) MBE growth. The average island size reduces with increasing growth rate. The island density rises with increasing both growth rate and As4/Ga pressure ratio. Three types of Ga diffusion length scales obeying the same law are discussed. Ga diffusion length is strongly influenced by growth rate and As4/Ga pressure ratio.