Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

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Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

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作者：Jie Yang^a ; ^b ; Bo Zhao^a ; ^b ; Chong Wang^a ; ^b ; ^{cwang@mail.sitp.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Feng Qiu^a ; ^b ; Rongfei Wang^a ; ^b ; Yu Yang^a ; ^b ; ^{yuyang@ynu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：Ge/Si islands ; Ion beam sputtering deposition ; Spacing between screen and accelerator grids ; Self-assembly
刊名：Applied Surface Science
出版年：2016
出版时间：15 November 2016
年：2016
卷：386
期：Complete
页码：303-308
全文大小：1607 K

文摘

•: Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps.
•: Ge islands with larger sizes and low density are observed in 1-mm-spaced samples.
•: The island growth was determined by sputter energy and the quality of Si buffer.
•: The crystalline volume fraction of buffer must be higher than 72% to grow islands.

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