Study of photoconduction properties of CVD grown β-Ga<sub>2</sub>O<sub>3</sub> nanowires

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Study of photoconduction properties of CVD grown β-Ga₂O₃ nanowires

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作者：Sudheer Kumar^a ; ^{sudheer83.iitr@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Sajal Dhara^b ; Ritesh Agarwal^b ; R. Singh^a ; ^{rsingh@physics.iitd.ac.in" class="auth_mail" title="E-mail the corresponding author}
关键词：Gallium oxide nanowires ; Transmission electron microscopy (TEM) ; Raman spectrum ; Photoconduction ; Photodetectors
刊名：Journal of Alloys and Compounds
出版年：2016
出版时间：25 October 2016
年：2016
卷：683
期：Complete
页码：143-148
全文大小：1848 K

文摘

•: β-Ga₂O₃ NWs has been grown using chemical vapor deposition technique.
•: Structural, morphological and optical properties of NWs have been investigated.
•: Metal-semiconductor-metal (MSM) photodetectors have been fabricated.
•: The photocurrent increases with the increase in incident laser power.
•: The photoconduction mechanism in β-Ga₂O₃ NWs is also presented.

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