Generation–recombination noise and flicker noise are dominant at low frequencies.

Diffusion noise is dominant at high frequency.

Noise densities in CG-TFET are lesser than that in HJ-TFET.

Traps degrade transfer characteristics of CG-TFET more than HJ-TFET. Subthreshold Swing degrades in presence of traps.

Cut-off frequency of CG-TFET increases with gate voltage.