The influence of Ti doping and annealing on Ce2Ti2O7 flash memory devices

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The influence of Ti doping and annealing on Ce₂Ti₂O₇ flash memory devices

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作者：Chyuan Haur Kao^a ; ^b ; ^d ; Su Zhien Chen^a ; ^b ; Yang Luo^c ; Wang Ting Chiu^c ; Shih Wei Chiu^c ; I Chien Chen^c ; Chan-Yu Lin^b ; Hsiang Chen^c ; ^{hchen@ncnu.edu.tw}
关键词：Ce2Ti2O7 ; Flash memory ; Ti doping ; Annealing ; Crystallization
刊名：Applied Surface Science
出版年：2017
出版时间：28 February 2017
年：2017
卷：396
期：Complete
页码：1673-1677
全文大小：1984 K
卷排序：396

文摘

Ce2Ti2O7 flash memories have been fabricated. Material quality can be improved by annealing. The memory performance can be enhanced by Ti doping. Ti doping and annealing can reinforce crystallization.