刊名:Journal of Electron Spectroscopy and Related Phenomena
出版年:1998
出版时间:November, 1998
年:1998
卷:96
期:1-3
页码:195-208
全文大小:521 K
文摘
The Si L2,3-spectra of thin films of transition d-metal (TM) silicides (d-silicides) obtained by the ultrasoft X-ray emission spectroscopy (USXES) method have been analyzed on the basis of our d–s,p resonance model. Different stoichiometric composition silicides were obtained depending on the annealing conditions of heterostructures TM/Si mono TM/SiO2/Si mono. Compared with the spectra of the bulk samples, Si L2,3-spectra of thin film silicides demonstrate an increased intensity in the high energy range near the Fermi level. The unique sharp intensive peak of the Si s-state at the Fermi level is a consequence of the distinction of d–s resonance in NiSi2.
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