Specific features of electron structures of some thin film d-silicides

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• 作者：Domashevskaya ; E.P. ; Yurakov ; Yu.A.
• 关键词：Electron structure ; Local density of states ; Thin films ; d-Silicides ; USXES ; d&ndash ; s ; p Resonance
• 刊名：Journal of Electron Spectroscopy and Related Phenomena
• 出版年：1998
• 出版时间：November, 1998
• 年：1998
• 卷：96
• 期：1-3
• 页码：195-208
• 全文大小：521 K

文摘

The Si L_2,3-spectra of thin films of transition d-metal (TM) silicides (d-silicides) obtained by the ultrasoft X-ray emission spectroscopy (USXES) method have been analyzed on the basis of our d–s,p resonance model. Different stoichiometric composition silicides were obtained depending on the annealing conditions of heterostructures TM/Si mono TM/SiO₂/Si mono. Compared with the spectra of the bulk samples, Si L_2,3-spectra of thin film silicides demonstrate an increased intensity in the high energy range near the Fermi level. The unique sharp intensive peak of the Si s-state at the Fermi level is a consequence of the distinction of d–s resonance in NiSi₂.