Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

详细信息    查看全文

• 作者：Hirokazu Fukidome ; Kei Tanaka ; Masamichi Yoshimura ; Kazuyuki Ueda ; Fang-Zhun Guo ; Toyohiko Kinoshita ; Keisuke Kobayashi
• 关键词：Silicon ; Oxidation ; Photoemission electron microscopy ; Mirror electron microscopy ; X-ray photoelectron spectroscopy
• 刊名：Surface Science
• 出版年：2007
• 出版时间：15 October 2007
• 年：2007
• 卷：601
• 期：20
• 页码：4675-4679
• 全文大小：270 K

文摘

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.