The effect of transparent conductive nanocrystalline oxide thin layer on performance of UV detectors fabricated on Fe-doped GaN

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• 作者：Z. Xing^b ; R.X. Wang^a ; ^{rxwang2008@sinano.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Y.M. Fan^b ; J.F. Wang^b ; B.S. Zhang^b ; K. Xu^b
• 关键词：GaN ; GZO ; UV detector ; Thin film ; Oxide semiconductor
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：57
• 期：Complete
• 页码：132-136
• 全文大小：868 K

文摘

Two kinds of metal-semiconductor-metal (MSM) Schottky UV detectors with and without an insertion layer of transparent conductive nanocrystalline oxide were fabricated on Fe-doped semi-insulating GaN epilayers. It is found that the optical responsivity of the detectors can be significantly improved by two orders of magnitude by inserting a thin layer of Ga-doped nanocrystalline ZnO (GZO) between metal electrode and Fe-doped GaN. Such improvement is suggested to be associated with the valence-band discontinuities and efficient suppression recombination of traps induced by Fe impurities in GaN due to the insertion of a thin layer of GZO.