Near-ultraviolet electroluminescence from ZnO-based light-emitting diodes with n-ZnO nanorod/p-GaN direct-bonding heterojunction structure

设为首页

收藏本站

网站地图 | English | 公务邮箱

About the library

Background
History
Leadership
Organization

Readers' Guide

Opening Hours
Collections
Help Via Email

Publications

Electronic Information Resources

Near-ultraviolet electroluminescence from ZnO-based light-emitting diodes with n-ZnO nanorod/p-GaN direct-bonding heterojunction structure

详细信息查看全文

作者：Cheng Chen ; Jun Zhang ; Jingwen Chen ; Shuai Wang ; Renli Liang ; Wei Zhang ; Jiangnan Dai ; ^{daijiangnan@hust.edu.cn} ; Changqing Chen
关键词：ZnO ; Nanorods ; Ultraviolet ; Luminescence ; Semiconductors
刊名：Materials Letters
出版年：2017
出版时间：15 February 2017
年：2017
卷：189
期：Complete
页码：144-147
全文大小：914 K
卷排序：189

文摘

The high-quality p-n heterojunction have been achieved. The heterostructure displays a pure near-ultraviolet electroluminescence emission. The deep-level emission had been almost totally suppressed.