The electronic properties of bare and alkali metal adsorbed two-dimensional GeSi alloy sheet

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The electronic properties of bare and alkali metal adsorbed two-dimensional GeSi alloy sheet

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作者：Wenhao Qiu ; Han Ye ; ^{Han_ye@bupt.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhongyuan Yu ; Yumin Liu
关键词：Two-dimensional alloy sheet ; Alkali metal ; Surface adsorption ; Electronic structures ; First-principles calculations
刊名：Superlattices and Microstructures
出版年：2016
出版时间：September 2016
年：2016
卷：97
期：Complete
页码：250-257
全文大小：1452 K

文摘

•: Two-dimensional GeSi alloy sheets (GeSiAS) with ordered atom distributions are modeled.
•: The band gaps of bare and AM atoms adsorbed GeSiAS can be tuned by alloy concentration.
•: The band gaps range from 14.8 to 269.1 meV in cases of AM adsorption, with high mobility of carriers maintained.

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