Enhanced photoelectrochemical performance of planar p-Silicon by APCVD deposition of surface mesoporous hematite coating
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文摘

A novel α-Fe2O3 coated p-Si photoelectrode was prepared by an APCVD method.

The PEC performance of planar p-Si was significantly enhanced by α-Fe2O3.

The catalytic effect on PEC hydrogen production of α-Fe2O3 on planar Si is discussed.

The morphology and thickness of the surface oxide layers for their effects on PEC performances are discussed.

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