Sintering temperature dependence of thermoelectric performance in CuCrSe₂ prepared via mechanical alloying

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• 作者：Yanci Yan^a ; Lijie Guo^a ; Zhi Zhang^c ; Xu Lu^a ; Kunling Peng^a ; ^b ; Wei Yao^a ; Jiyan Dai^c ; Guoyu Wang^b ; Xiaoyuan Zhou^a ; ^{xiaoyuan2013@cqu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：CuCrSe2 ; Single phase ; Layered structure ; PLEC
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：127
• 期：Complete
• 页码：127-131
• 全文大小：1059 K

文摘

CuCrSe₂ compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe₂ single phase completely free of a metallic secondary phase CuCr₂Se₄. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe₂ compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K.