Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition

详细信息    查看全文

• 作者：Ying Zhu ; Shisheng Lin ; Yinzhu Zhang ; Zhizhen Ye ; Yangfan Lu ; Jianguo Lu ; Binghui Zhao
• 关键词：ZnO ; Thin films ; p-type ; N-doped
• 刊名：Applied Surface Science
• 出版年：2009
• 出版时间：1 April 2009
• 年：2009
• 卷：255
• 期：12
• 页码：6201-6204
• 全文大小：529 K

文摘

N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. The electrical properties of the films were extremely sensitive to the substrate temperature and the conduction type could be reversed in a narrow range from 380 °C to 420 °C. Based on X-ray photoelectron spectroscopy, a high compensation effect in the N-doped ZnO films grown by plasma-free MOCVD was suggested to explain the temperature-dependent phenomenon.