Monolithic pixel detectors with FD-SOI pixel process technology

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• 作者：Toshinobu Miyoshi ; Yasuo Arai ; Tadashi Chiba ; Yowichi Fujita ; Kazuhiko Hara ; Shunsuke Honda ; Yasushi Igarashi ; Yoichi Ikegami ; Yukiko Ikemoto ; Takashi Kohriki ; Morifumi Ohno ; Yoshimasa Ono ; Naoyuki Shinoda ; Ayaki Takeda ; Kazuya Tauchi ; Toru Tsuboyama ; Hirofumi Tadokoro ; Yoshinobu Unno ; Masashi Yanagihara
• 关键词：SOI ; Monolithic detector ; CMOS
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：21 December, 2013
• 年：2013
• 卷：732
• 期：Complete
• 页码：530-534
• 全文大小：2624 K

文摘

Truly monolithic pixel detectors were fabricated with SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors.