Tunable electrical properties of NiO thin films and p-type thin-film transistors

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Tunable electrical properties of NiO thin films and p-type thin-film transistors

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作者：Yongyue Chen ; Yajie Sun ; Xusheng Dai ; Bingpo Zhang ; Zhenyu Ye ; Miao Wang ; Huizhen Wu ; ^{hzwu@zju.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：Sputtering ; Electrical properties ; Thin film transistor ; NiO
刊名：Thin Solid Films
出版年：2015
出版时间：1 October 2015
年：2015
卷：592
期：part_PA
页码：195-199
全文大小：966 K

文摘

•: Electrical properties of sputtered NiO films were tuned.
•: Achievement of high mobility of 1.07 cm²/Vs and hole concentration of 2.78 × 10¹⁷ cm^− 3.
•: Application of RF sputtered NiO films as active layer in thin film transistors.

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