The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time

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• 作者：Yue Zhao ; Zhiyong Lv ; Zhao Li ; Xiaoyan Liang ; Jiahua Min ; Linjun Wang ; Weimin Shi ; Yongyue Liu
• 关键词：Porous silicon ; Photoluminescence ; μ ; -PCD measurements
• 刊名：Solid-State Electronics
• 出版年：2010
• 出版时间：April 2010
• 年：2010
• 卷：54
• 期：4
• 页码：452-456
• 全文大小：629 K

文摘

In this paper, the photoluminescence of as-prepared porous silicon were investigated. The visible light emission is associated with surface defects states of porous silicon. The hydrogen atoms on porous silicon surface can passivate irradiative centers and lead to the increase of emission intensity, which can be proved by the microwave-detected photoconductivity decay measurements.