Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature

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• 作者：Sang Hoon Kim¹ ; ^a ; Cheol Min Choi^a ; Kil Mok Lee^a ; Yoon-Bong Hahn ; ^a ; ^{ybhahn@chonbuk.ac.kr}
• 关键词：Carbon nitride ; PECVD ; Hardness ; Optical absorption ; Etch behavior
• 刊名：Synthetic Metals
• 出版年：2010
• 出版时间：December 2010
• 年：2010
• 卷：160
• 期：23-24
• 页码：2442-2446
• 全文大小：498 K

文摘

Amorphous carbon nitride (a-CN) films were grown on Si(1 0 0) and SiO₂/Si(1 0 0) substrates by plasma enhanced chemical vapor deposition at room temperature using gas mixtures of CH₄ and N₂. The as-deposited films showed two bond structures of CN and CN, and with increasing the N₂ content the bond structure changed to graphite-like structure. All the samples showed low optical absorption coefficient (k < 0.15) in the wavelength range of 300–800 nm. The a-CN films exhibited a good resistance to etching (i.e. higher selectivity over SiO₂), which indicates a potential use of a-CN films as a new hard mask material.