Deposition of a polycrystalline GaN layer on a porous Si/Si substrate by an electron beam evaporator with a successive ammonia annealing treatment
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文摘
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The size of the Si pores increases with etching time.

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Polycrystalline GaN was formed when the samples were subjected to the NH3 annealing.

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30 min-etched porous Si gives the best properties to the polycrystalline GaN.

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