Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zrb>0.2b>Tib>0.8b>)Ob>3b>-0.5(Bab>0.7b>Cab>0.3b>)TiOb>3b> thin films

详细信息    查看全文

• 作者：J.P.B. Silva^a ; ^b ; ^{josesilva@fisica.uminho.pt" class="auth_mail" title="E-mail the corresponding author} ; K. Kamakshi^a ; ^b ; ^c ; K.C. Sekhar^a ; ^d ; X.R. Nó ; voa^e ; E.C. Queiró ; s^f ; J. Agostinho Moreira^b ; A. Almeida^b ; M. Pereira^a ; P.B. Tavares^f ; M.J.M. Gomes^a
• 关键词：Light controlled resistive switching ; Photovoltaic effect ; Ferroelectricity ; (0.5BZT-0.5BCT) thin films
• 刊名：Journal of the European Ceramic Society
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：37
• 期：2
• 页码：583-591
• 全文大小：3708 K

文摘

In this work, the structural and ferroelectric properties of 0.5Ba(Zrb>0.2b>Tib>0.8b>)Ob>3b>-0.5(Bab>0.7b>Cab>0.3b>)TiOb>3b> (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage ≈0.8 V and the short circuit current density ≈72.6 μAcm⁻². The photovoltaic efficiency is found to be ≈0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted.