Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization

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Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization

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作者：Dharmendra Singh Yadav ; ^{tech.dharmendra26@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Dheeraj Sharma ^{dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Bhagwan Ram Raad ^{bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Varun Bajaj ^{bajajvarun056@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author}
关键词：Band to band tunneling ; Dual material gate ; Source pocket ; Gate underlap ; Hetero gate dielectric
刊名：Superlattices and Microstructures
出版年：2016
出版时间：August 2016
年：2016
卷：96
期：Complete
页码：36-46
全文大小：3832 K

文摘

•: A comparative study is performed for different TFET.
•: Dual work function of gate provides enhancement in ON state current.
•: Under lapping of gate at drain end provides suppression of ambipolar nature.
•: Combination of dual workfunction and under lapping gives improved ON current and suppressed ambipolar nature.
•: Underlap HGD DW TFET provides better performance.