Lateral phase separation in Cu-In-Ga precursor and Cu(In,Ga)Se₂ absorber thin films

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• 作者：Jan-Peter Bä ; cker^a ; ^{Jan-Peter.Baecker@Helmholtz-Berlin.de} ; Sebastian S. Schmidt^a ; ^{Sebastian.Schmidt@Helmholtz-Berlin.de} ; Humberto Rodriguez-Alvarez^a ; ^b ; ^{Humberto.RodriguezAlvarez@lithium-ep.com} ; Christian Wolf^a ; ^{Christian.Wolf@Helmholtz-Berlin.de} ; Christian A. Kaufmann^a ; ^{Kaufmann@Helmholtz-Berlin.de} ; Manuel Hartig^c ; ^{Manuel.Hartig@Helmholtz-Berlin.de} ; Roland Mainz^d ; ^{Roland.Mainz@Helmholtz-Berlin.de} ; Rutger Schlatmann^a ; ^{Rutger.Schlatmann@Helmholtz-Berlin.de}
• 关键词：Cu(In ; Ga)Se2 ; (CIGS) ; Rapid thermal annealing (RTA) ; Phase separation ; Dewetting ; Sequential process
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：162
• 期：Complete
• 页码：120-126
• 全文大小：1446 K
• 卷排序：162

文摘

Lateral phase separation and dewetting of Mo during precursor heating is observed. Dewetting is strongly decreased by applying faster heating rates. NaF deposited on top/underneath the precursor de-/increases the dewetting of Mo. Reduced dewetting during heating enables delayed Se supply during selenization.