In situ study of strain evolution during thin film Ti/Al(Si,Cu) reaction using synchrotron radiation

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• 作者：Rivero ; C. ; Bostrom ; O. ; Gergaud ; P. ; Thomas ; O. ; Boivin ; P. ; Mazuelas ; A.
• 关键词：Stress ; Reactivity ; TiAl₃ ; Thin films
• 刊名：Microelectronic Engineering
• 出版年：2002
• 出版时间：October, 2002
• 年：2002
• 卷：64
• 期：1-4
• 页码：81-89
• 全文大小：290 K

文摘

Stress development and relaxation are important issues for the reliability of integrated circuits. In this article we report on the stress evolution during solid state reaction, which occurs in Ti/Al bilayers. Whereas the formation of TiAl₃ is expected to induce large tensile stress because of a global volume decrease of 6–8 % , our in-situ X-ray diffraction measurements during annealing at 465°C indicate the formation of a compressive compound. Furthermore, an increase in the lattice parameter of Ti is evidenced by X-ray diffraction. A plausible explanation for this expansion is the incorporation of O in solution from a reaction with the underlying SiO₂ layer.