Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique

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Improved crosstalk noise modeling of MWCNT interconnects using FDTD technique

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作者：Vobulapuram Ramesh Kumar ; ^{rameshkumar.nith@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Brajesh Kumar Kaushik¹ ; ^{bkk23fec@iitr.ac.in" class="auth_mail" title="E-mail the corresponding author} ; Amalendu Patnaik¹ ; ^{apfecfec@iitr.ac.in" class="auth_mail" title="E-mail the corresponding author}
关键词：FDTD ; CMOS ; Multiwall CNT ; Crosstalk
刊名：Microelectronics Journal
出版年：2015
出版时间：December 2015
年：2015
卷：46
期：12
页码：1263-1268
全文大小：1077 K

文摘

•: Crosstalk noise model is presented for CMOS-gate driven MWCNT interconnects using FDTD.
•: CMOS driver is modeled by modified alpha power law model.
•: The proposed model is validated with industry standard HSPICE simulations.
•: The average error while estimating the noise peak voltage is less than 2%.
•: The proposed model can be incorporated in CAD simulation tools.

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