Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

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• 作者：Ramanjaneyulu Mannam^a ; ^{ramu.nov9@gmail.com} ; E. Senthil Kumar^b ; Nandita DasGupta^c ; M.S. Ramachandra Rao^a ; ^{msrrao@iitm.ac.in}
• 关键词：Zinc oxide ; Thin films ; Pulsed laser deposition ; Optical properties ; Electrical transport
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：400
• 期：Complete
• 页码：312-317
• 全文大小：2617 K
• 卷排序：400

文摘

Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. Rapid thermal annealing has been used to remove both H and C from the films. Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of NH complex takes place only at 800 °C. The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C.