Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

详细信息    查看全文

• 作者：Han-Ki Kim
• 关键词：Polycrystalline Si ; CECVD ; Hydrogen dilution ; TEM ; LTPS
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2006
• 出版时间：December 2006
• 年：2006
• 卷：253
• 期：1-2
• 页码：255-259
• 全文大小：926 K

文摘

The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature (80 °C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays.