Low tensile strain GaInAs:uid/GaAs:C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer

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• 作者：di Forte-Poisson ; M.-A. ; Bernard ; S. ; Teisseire ; L. ; Brylinski ; C. ; Cassette ; S. ; di Persio ; J.
• 关键词：73.40.&minus ; c ; 73.50.&minus ; h ; 73.61.Ey ; 68.65.+q ; MOVPE ; III&ndash ; V ; Superlattice ; P-type material ; Heterojunction bipolar transistor
• 刊名：Journal of Crystal Growth
• 出版年：2000
• 出版时间：December, 2000
• 年：2000
• 卷：221
• 期：1-4
• 页码：717-721
• 全文大小：601 K

文摘

This paper reports on the investigation of GaInP/GaAs HBT-advanced structures with well-controlled strained base layers based on GaAs:C/GaInAs:uid superlattice heterostructures. High-resolution X-ray diffraction (HRXRD) and TEM experiments performed on test GaAs:C/GaInAs:uid superlattice heterostructures reveal well defined and sharp GaInAs/GaAs well/barrier interfaces with a high structural quality. C–V measurements and SIMS analysis, indicate that a low base sheet resistance is achieved with less carbon concentration than needed in the commonly HBTs C-doped GaAs base layers, together with a large strain reduction as shown by X-ray. HBT test structures consisting of 8–11 (GaAs:C/GaInAs:uid) period superlattice base layers, with GaInAs thickness varying from 0.5 to 3.4nm have been processed. It is demonstrated that the GaInAs layer thickness must be less than 1nm to preserve the current gain β of the device.