Sulfurization and post-selenization of oxides precursors for high quality CuIn(S, Se)<sub>2</sub> thin films

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Sulfurization and post-selenization of oxides precursors for high quality CuIn(S, Se)₂ thin films

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作者：Miaoju Wu^a ; Guilin Chen^a ; ^b ; ^{glchen@fjnu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Xiaoping Wu^a ; Jifu Zhao^a ; Limei Lin^a ; ^b ; Jinyang Liu^a ; ^b ; Weihuang Wang^a ; Fachun Lai^a ; ^b ; ^{laifc@fjnu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
关键词：CISSe ; Oxides ; Semiconductors ; Thin films ; Crystal growth
刊名：Materials Science in Semiconductor Processing
出版年：2016
出版时间：15 June 2016
年：2016
卷：48
期：Complete
页码：33-38
全文大小：1911 K

文摘

•: Sulfurization and post-selenization of oxides precursors for CISSe thin films.
•: The oxides precursors were sulfurized to eliminate the impurity phase of In₂O₃ for obtaining pure CIS phases.
•: The CISSe films with pure phase, improved crystallinity, larger grain size, and optimized band gap were obtained.

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