Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells

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Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells

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作者：I.E. Orozco Hinostroza^a ; ^{ignacio.orozco@ipicyt.edu.mx" class="auth_mail" title="E-mail the corresponding author} ; M. Avalos-Borja^a ; ^b ; V.D. Compeá ; n Garcí ; a^c ; C. Cuellar Zamora^c ; A.G. Rodrí ; guez^c ; E. Ló ; pez Luna^c ; M.A. Vidal^c ; ^{mavidalborbolla@yahoo.com.mx" class="auth_mail" title="E-mail the corresponding author}
关键词：A3. Quantum wells ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Heterojunction semiconductor devices
刊名：Journal of Crystal Growth
出版年：2016
出版时间：1 February 2016
年：2016
卷：435
期：Complete
页码：110-113
全文大小：933 K

文摘

class="label">•: Cubic InGaN Single Quantum Wells were grown on MgO by PAMBE.
class="label">•: Transition emissions were studied by means of photoluminescence.
class="label">•: A heterostructure with several QWs was synthesized.
class="label">•: Emissions from violet to red were achieved.
class="label">•: Using Vegard’s law the In compositions was calculated with RHEED pattern results.

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