Interface characterization of high-quality SrTiO₃ thin films on Si(100) substrates grown by molecular beam epitaxy

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• 作者：Ramdani ; J. ; Droopad ; R. ; Yu ; Z. ; Curless ; J.A. ; Overgaard ; C.D. ; Finder ; J. ; Eisenbeiser ; K. ; et. al.
• 关键词：Epitaxy ; SrTiO₃ ; Interface ; Silicon ; MBE ; 68.35.G ; 77.84.B ; 81.15.H ; 85.30.T ; TI ; SF ; EL ; IJF ; EB ; XBD ; PG
• 刊名：Applied Surface Science
• 出版年：2000
• 出版时间：June, 2000
• 年：2000
• 卷：159-160
• 期：Complete
• 页码：127-133
• 全文大小：2.30 M

文摘

Single-crystal SrTiO₃ has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO₃/Si interface. A regrowth of an amorphous interfacial layer as thick as 23 Å has been observed and identified as a form of SiO_x. This is a direct result of an internal oxidation during the growth of the STO film due to the oxygen diffusion and reaction with the silicon substrate at the interface. The optimization of the deposition process in terms of growth temperature and oxygen partial pressure has led to an interfacial layer as thin as 11 Å. Metal oxide semiconductor (MOS) capacitors with an equivalent oxide thickness t_ox of 12 Å and a leakage current of 2×10⁻⁴ A/cm² have been obtained for a 50 Å SrTiO₃.