Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

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• 作者：Droopad ; R. ; Yu ; Z. ; Ramdani ; J. ; Hilt ; L. ; Curless ; J. ; Overgaard ; C. ; Edwards Jr ; J.L. ; Finder ; J. ; et. al.
• 关键词：Dielectric constant ; Epitaxial oxides ; Reflection high energy electron diffraction
• 刊名：Materials Science and Engineering: B
• 出版年：2001
• 出版时间：December 19, 2001
• 年：2001
• 卷：87
• 期：3
• 页码：292-296
• 全文大小：367 K

文摘

Thin films of perovskite-type oxide SrTiO₃ have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of oxides directly on silicon. Also, observations of RHEED during growth and X-ray diffraction (XRD) analysis indicate that high quality heteroepitaxy on Si takes place with SrTiO₃(001)//Si(001) and SrTiO₃[010]//Si[110]. Thin SrTiO₃ layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness <10 Å has been obtained for a 110 Å thick SrTiO₃ dielectric film with interface state density around 6.4×10¹⁰ cm⁻² eV⁻¹, and the inversion layer carrier mobilities of 220 and 62 cm² V⁻¹ s⁻¹ for NMOS and PMOS devices, respectively.