Epitaxial oxides on silicon grown by molecular beam epitaxy

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• 作者：Droopad ; Ravi ; Yu ; Zhiyi ; Ramdani ; Jamal ; Hilt ; Lyndee ; Curless ; Jay ; Overgaard ; Corey ; Edwards ; John L. ; et. al.
• 关键词：72.40.Qv ; 81.15.Hi ; 77.55.+f ; A3. Molecular beam epitaxy ; B1. Oxides ; B1. Perovskites ; B2. Dieelectric materials
• 刊名：Journal of Crystal Growth
• 出版年：2001
• 出版时间：July, 2001
• 年：2001
• 卷：227-228
• 期：Complete
• 页码：936-943
• 全文大小：352 K

文摘

Using molecular beam epitaxy, thin films of perovskite-type oxide Sr_xBa_1−xTiO₃ (0≤x≤1) have been grown epitaxially on Si(001) substrates. Growth parameters were determined using reflection high energy electron diffraction (RHEED). Observation of RHEED during growth and X-ray diffraction analysis indicates that high quality heteroepitaxy on Si takes place with Sr_xBa_1−xTiO₃(001)//Si(001) and Sr_xBa_1−xTiO₃[010]//Si[110]. Extensive atomic simulations have also been carried out to understand the interface structure and give some insights into the initial growth mechanism of the oxide layers on silicon. SrTiO₃ layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness <10Å has been obtained for a 110Å thick SrTiO₃ dielectric film with interface state density around 6.4×10¹⁰/cm²/eV, and the inversion layer carrier mobilities of 220 and 62cm²/V/s for NMOS and PMOS devices, respectively.