C and Si delta doping in Ge by CH<sub>3</sub>SiH<sub>3</sub> using reduced pressure chemical vapor deposition

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C and Si delta doping in Ge by CH₃SiH₃ using reduced pressure chemical vapor deposition

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作者：Yuji Yamamoto^a ; ^{yamamoto@ihp-microelectronics.com" class="auth_mail" title="E-mail the corresponding author} ; Naofumi Ueno^b ; Masao Sakuraba^b ; Junichi Murota^c ; Andreas Mai^a ; Bernd Tillack^a ; ^d
关键词：Chemical vapor deposition ; Germanium ; Methylsilane ; Atomic layer doping ; Delta layer
刊名：Thin Solid Films
出版年：2016
出版时间：1 March 2016
年：2016
卷：602
期：Complete
页码：24-28
全文大小：862 K

文摘

•: C and Si delta doping in Ge is investigated using RPCVD system by CH₃SiH₃ exposure.
•: Atomically flat C and Si delta layers are fabricated at 350 °C.
•: Incorporated C and Si doses are saturated at one mono-layer below 350 °C.
•: CH₃SiH₃ adsorption occurred without decomposing CSi bond.
•: Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

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