Room temperature HEMT detector in 0.1-1 THz

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• 作者：M. Alabaf ; H. Rasooli Saghai ; ^{h_rasooly_s@yahoo.com} ; ^{h_rasooli@iaut.ac.ir}
• 关键词：THz detection ; 0.1&ndash ; 1  ; Thz ranges ; Room temperature ; GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT)
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：130
• 期：Complete
• 页码：407-412
• 全文大小：1158 K
• 卷排序：130

文摘

In this paper, a method for improving the non-resonance regime of the THz detection at room temperature by GaAs/AlGaAshetrostructure High Electron Mobility Transistor (HEMT) is proposed in the range of 0.1–1 THz.In this method, by applying DC voltage to drain, the momentum relaxation time increases and as a result, the quality of parameter is reaching resonance regime. This leads THz HEMT detector to be able of operate in room temperature.