Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

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Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

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作者：Bhagwan Ram Raad ; ^{bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Kaushal Nigam ^{kaushalnigam3@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Dheeraj Sharma ^{dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author}
关键词：Band to band tunneling (BTBT) ; Bandgap engineering ; Gate material work function engineering ; Gate dielectric engineering
刊名：Superlattices and Microstructures
出版年：2016
出版时间：June 2016
年：2016
卷：94
期：Complete
页码：138-146
全文大小：2109 K

文摘

•: Bandgap engineering improves ON-state current and suppresses the ambipolar behaviour.
•: Further, device performance is enhanced by work function engineering and gate dielectric engineering with bandgap engineering.
•: Optimization of the work function engineering is performed for improving device performance.

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