Synthesis of BSO (Bi4Si3O12) scintillation thin film by sol-gel method
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文摘
Bismuth silicate (Bi4Si3O12, BSO) thin films have been fabricated by sol-gel process. The stable sol was synthesized by using Bi(NO3)3¡¤5H2O and Si(OC2H5)4 (TEOS) as the precursors, acetic acid and 2-ethoxyethanol as the solvents. The thin film precursor was deposited onto SiO2 substrates by spin-coating at 3000 rpm and was dried at 110 ¡ãC. X-ray diffraction showed that BSO phase starts to form at 700 ¡ãC and single-phase BSO polycrystalline thin films were obtained at 800 ¡ãC. The micromorphology and luminescent properties of coated films were characterized by means of scanning electron microscopy and fluorophotometer respectively.
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