Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)

详细信息    查看全文

• 作者：Anna Marzegalli^a ; Andrea Cortinovis^a ; Francesco Basso Basset^a ; Emiliano Bonera^a ; Fabio Pezzoli^a ; Andrea Scaccabarozzi^a ; Fabio Isa^b ; Giovanni Isella^c ; Peter Zaumseil^d ; Giovanni Capellini^d ; ^e ; Thomas Schroeder^d ; Leo Miglio^a ; ^{leo.miglio@unimib.it}
• 关键词：Stress relaxation ; Semiconductor material ; Finite elements ; Thermal strain ; Germanium
• 刊名：Materials & Design
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：116
• 期：Complete
• 页码：144-151
• 全文大小：1467 K
• 卷排序：116

文摘

Quantitative proof by simulations and experiments that the rotation of Si pillars sustaining a continuous Ge film is crucial. An accurate analysis demonstrates how strain relaxation depends on pillar aspect ratio. Quantitative indication by simulations and experiments of the role played by the array size in setting the strain relaxation. Our continuum findings are general, valid for any heteroepitaxial system, independently of crystal orientation. Our results are valid also for non-epitaxial films, such as polycrystalline, amorphous or wafer-bonded structures.